Dual-Gate Field-Effect Transistor Ultrahighly Sensitive Hydrogen Sensors Enabled by an Ultrahigh Inherent Gain
Year: 2025
Type: article
Source: ACS Applied Electronic Materials
Institutions: Xiangtan University, Peking University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Awards: 晶圆级碳基场效应型VOCs气体传感器的研究, G3808306184
OpenAlex ID: W4410399799