Comprehensive Analysis of Oxidant Effects During ALD Process of Hf 0.5 Zr 0.5 O 2 Ferroelectric Thin Films
Year: 2025
Type: article
Abstract: To guide the process optimization of HfO2-based ferroelectric (FE) devices, the effects of oxidants (O3/H2O) during atomic layer deposition (ALD) process of Hf0.5Zr0.5O2 films are systematically investigated. The results indicate that using the stronger oxidant (O3) leads to higher remanent polarization (Pr) but poorer endurance, with significant leakage deterioration after wakeup and a pronounced imprint effect during cycling. In contrast, the weaker oxidant (H2O) results in lower Pr but improves polarization switching speed. The influence of oxidants on pre-existing defects and interfacial reactions may be potential key factors. Our findings provide valuable insights for process optimization tailored to specific application requirements.
Authors: Xiaopeng Li, Yilin Hou, Xiaoyu Dou, Yaoyu He, Yuwei Qu, Pengpeng Sang, Xuepeng Zhan, Xiaolei Wang, Jixuan Wu, Jiezhi Chen
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $1,350
OpenAlex ID: W4410427938