Work

Analysis of Trapping Mechanisms and Capacitance Dispersion in Double-π Gate AlGaN/GaN HEMTs Under High-Temperature Conditions

Year: 2025

Type: article

Source: IEEE Transactions on Device and Materials Reliability

DOI: 10.1109/tdmr.2025.3570841

Authors: Rayabarapu Venkateswarlu, Bibhudendra Acharya, Guru Prasad Mishra

Institution: National Institute of Technology Raipur

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4410427969

FWCI: 2.262

Cites: 52

Cited by: 7

Related to: 10