Work

Demonstration of a GaN-based P-channel FinFET with high current density based on multi-channel structure

Year: 2025

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0258789

Authors: Xu Liu, Shengrui Xu, Tao Zhang, Hongchang Tao, Huake Su, Yuan Gao, Lei Xie, Xinhao Wang, Jincheng Zhang, Yue Hao

Institution: Xidian University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China, Natural Science Basic Research Program of Shaanxi Province

Awards: G3925733209, G3927197278, G6503941701, G7256692928, G8561519819

OpenAlex ID: W4410515665

FWCI: 3.426

Cites: 27

Cited by: 11

Related to: 10