Year: 2025
Type: article
Abstract: This paper presents an RF switch chip with a wide operating bandwidth from 6 to 18 GHz, designed for RF front-end applications in mobile communications. A series-parallel topology combined with a stacked transistor structure was employed to improve power handling while maintaining low insertion loss and high isolation. To further optimize isolation and return loss, LC resonant circuits were introduced by utilizing off-state transistors as capacitive elements. Compared to existing designs, the proposed switch achieved an improved trade-off between bandwidth, power capacity, and port performance. Measurement results showed insertion loss below 1.917 dB, isolation above 38.839 dB, return loss better than 13.075 dB, and 1 dB input compression point above 32 dBm at 12 GHz, confirming the effectiveness and novelty of the broadband design.
Source: Sensors
DOI: 10.3390/s25103209
Authors: Xindong Huang, Chengying Chen, Shaokang Zhou
Institution: Xiamen University of Technology
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $3,137
OpenAlex ID: W4410519898