Work

Impact of Interconnect on Ferroelectric FinFET-Based Logic-in-Memory Circuits at 3-nm Technology Node

Year: 2025

Type: article

Source: IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

DOI: 10.1109/tcad.2025.3572023

Authors: Juhwan Park, Huijun Kim, Hanggyo Jung, Changho Ra, Jongwook Jeon

Institution: Sungkyunkwan University

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

Funder: Ministry of Science and ICT, South Korea

Award: G835376242

OpenAlex ID: W4410536127

FWCI: 0.924

Cites: 27

Cited by: 4

Related to: 10