An Online Gate Oxide Degradation Monitoring Method for SiC MOSFETs Based on Turn-ON Gate Current Change Rate
Year: 2025
Type: article
Abstract: Gate oxide degradation (GOD) presents a reliability issue for silicon carbide (SiC) metal-oxide-semiconductor fieldeffect transistors (MOSFETs), especially under high-temperature and high-electric-field conditions. This letter proposes an online condition monitoring (CM) method based on the peak value of the turn-on gate current change rate (dig/dt,max). The technique utilizes a non-invasive PCB Rogowski coil to measure dig/dt,max, demonstrating high practicality. Accelerated aging tests under positive and negative high-temperature gate bias (HTGB) and hightemperature gate switching (HTGS) conditions reveal correlations between dig/dt,maxand GOD, with variations of 5.61%, 5% and 8.33%, after 160 hours of aging. Double pulse test (DPT) results indicate that dig/dt,max is independent of external factors such as temperature, drain-source voltage (Vds), drain current (Ids) and package aging. Results from a buck converter further validate the feasibility of long-term online monitoring.
Authors: Hui Meng, Junwei Liu, Yi Zhang, Chi Yung Chung
Institution: Hong Kong Polytechnic University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
Funder: Innovation and Technology Fund
OpenAlex ID: W4410536580