Work

NH3-Plasma Treatment Induced Performance Enhancement of MoS2 Negative-Capacitance Transistors With Zr1−x Al x O y as Ferroelectric Layer Annealed at Low Temperature

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3561707

Authors: Di Jiang, Jing-Ping Xu, Lu Liu

Institution: Huazhong University of Science and Technology

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: G3964020448, G986724856

OpenAlex ID: W4410536827

FWCI:

Cites: 37

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Related to: 10