Work

Enhanced ESD Reliability of AlGaN/GaN MIS-HEMTs Using a p-Type Oxide Passivation

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3569269

Authors: Mohammad Ateeb Munshi, Mehak Ashraf Mir, Mayank Shrivastava

Institution: Indian Institute of Science Bangalore

Language: English

Topic: Electrostatic Discharge in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Department of Science and Technology, Government of Kerala

OpenAlex ID: W4410536831

FWCI: 2.072

Cites: 24

Cited by: 9

Related to: 10