Work

High RF Performance Enhancement-Mode Thin-Barrier AlGaN/GaN HEMTs on Si Substrate for Low-Voltage Applications

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3568805

Authors: Mengdi Li, Jiejie Zhu, Lingjie Qin, Yuxi Zhou, Bowen Zhang, Mingchen Zhang, Quanxu Su, Ziyue Zhao, Qing Zhu, Huimei Ma, Huantao Duan, Xiaohua Ma, Yue Hao

Institution: Xidian University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Fundamental Research Funds for the Central Universities

Awards: G1071447927, G2436163274, G704711181, G8919149685

OpenAlex ID: W4410536853

FWCI: 5.354

Cites: 34

Cited by: 17

Related to: 10