Normally-Off, Quasi-Vertical GaN FinFETs on Sapphire Substrates With Fin Widths Structured by i-Line Lithography in the 100 nm Range
Year: 2025
Type: article
Source: IEEE Electron Device Letters
Institution: Fraunhofer Institute for Applied Solid State Physics
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4410537195