Year: 2025
Type: article
Abstract: We propose a complementary metal-oxide-semiconductor (CMOS) image sensor (CIS) that performs edge mask computation and detection during the analog-to-digital (A/D) conversion process to output 1-bit edge images. By utilizing the characteristics of the edge that can obtain a 1-bit image, the edge mask and thresholding operations are performed simultaneously during the A/D conversion process, thereby reducing memory capacity along with a high number of frames per second (FPS). Additionally, by implementing a 1-bit analog-to-digital converter (ADC) instead of a high-resolution ADC and counter through the 1-bit edge data obtained from the edge mask operation, both static and dynamic power consumption are reduced. The proposed CIS, fabricated with a one-poly six-metal CIS process with a 4T-active pixel sensor, has a core area of 2.546 mm × 1.923 mm in a chip area of 2.558 mm × 4.3 mm. The total power consumption is 1.52 mW at 23 FPS, with power supplies of 2.8 V and 1.5 V for the analog domain and 1.5 V for the digital domain.
Source: Sensors
DOI: 10.3390/s25103219
Authors: Suhyeon Lee, Yu Chan Yun, Seung Min Heu, Kyu Hyun Lee, Seung Joon Lee, Kyungmin Lee, Jiin Moon, Hyuna Lim, Taeun Jang, Minkyu Song, Soo Youn Kim
Institution: Dongguk University
Language: English
Topic: CCD and CMOS Imaging Sensors
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $3,137
Awards: G2010165328, G7711585448
OpenAlex ID: W4410539571
