Simulation of mechanical properties of two-dimensional silicon carbide film with stochastically distributed vacancy defects
Year: 2025
Type: article
Source: The Journal of Chemical Physics
DOI: 10.1063/5.0269008
Authors: Aihua Ma, Jing Wang
Institution: Xinjiang University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4410601700