Work

Laser lift-off of ultraviolet-C light-emitting-diode epitaxial layers with an AlGaN nucleation layer grown on a sapphire substrate

Year: 2025

Type: article

Source: Japanese Journal of Applied Physics

DOI: 10.35848/1347-4065/addc21

Authors: Koji Okuno, Sena Miura, Maho Fujita, Teppei Takehisa, Hibiki Muto, Ryunosuke Oka, Naoki Hamashima, Masaki Ohya, Yoshiki Saito, Hisanori Ishiguro, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya

Institution: Meijo University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Ministry of the Environment, Government of Japan

OpenAlex ID: W4410610902

FWCI:

Cites: 34

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Related to: 10