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Oxidation Resistance Enhancement of Graphene-Oxide-Semiconductor Planar-Type Electron Sources Using Al2O3 Thin Protective Coating by Atomic Layer Deposition

Year: 2025

Type: article

Abstract: High Resolution Image Download MS PowerPoint Slide Graphene-oxide-semiconductor (GOS) planar electron-emitting devices with an aluminum oxide (Al 2 O 3 ) protective layer were found to improve oxidation resistance and to be capable of emitting electrons through a protective film on the device. An electron-transparent oxidation resistance layer for the GOS device was achieved with a uniform 3 nm Al 2 O 3 deposited by atomic-layer deposition at a low temperature of 100 °C after precleaning with H 2 O. A high electron emission current density of 1.01 mA/cm 2 and a high electron emission efficiency of 0.49% were obtained from the GOS electron-emitting device with the uniform 3 nm Al 2 O 3 protective film. The energy distribution of the electrons emitted from the GOS device with an Al 2 O 3 protection layer was higher than the work function of the graphene electrode, which indicated that the primary factor in the degradation of electron emission efficiency of the GOS device by the Al 2 O 3 protection layer was not the energy loss of the emitted electrons due to inelastic electron scattering within Al 2 O 3 but the electron backscattering at the protection layer due to elastic electron scattering. These results suggest that the electron emission efficiency and current density of oxygen-tolerant GOS devices could be further improved by a uniform Al 2 O 3 protective layer with a thickness below the mean free path of electron elastic scattering within Al 2 O 3 .

Source: ACS Omega

DOI: 10.1021/acsomega.5c01310

Authors: Ren Mutsukawa, Yoshinori Takao, Hiromasa Murata, Masayoshi Nagao, Katsuhisa Murakami

Institutions: Yokohama National University, National Institute of Advanced Industrial Science and Technology

Language: English

Topic: Graphene research and applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,935

Funders: Ministry of Education, Culture, Sports, Science and Technology, Japan Society for the Promotion of Science