Work

Modeling of 6T-SRAM Transistor Failure and Faults Caused by Injected Noise in Neural Networkst

Year: 2025

Type: conference-paper

Source: International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)

DOI: 10.1109/eurosime65125.2025.11006544

Authors: Zhiyuan Li, Bo Sun, Xiaoyan Xie, Yue Sun

Institutions: Guangdong University of Technology, Xiaomi (China)

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4410630768

FWCI:

Cites: 19

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Related to: 10