Work

Reliability Studies on SiC MOSFET Modules Following a Partial Failure Incident

Year: 2025

Type: conference-paper

Source: International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)

DOI: 10.1109/eurosime65125.2025.11006626

Authors: Shahriar Sarmast Ghahfarokhi, Bhanu Pratap Singh, Enes Ayaz, Hans-Peter Nee, Staffan Norrga

Institution: KTH Royal Institute of Technology

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Key Digital Technologies Joint Undertaking

Award: G4854111120

OpenAlex ID: W4410630770

FWCI:

Cites: 13

Cited by:

Related to: 10