Error-Free and Current-Driven Synthetic Antiferromagnetic Domain Wall Memory Enabled by Channel Meandering
Year: 2025
Type: article
Abstract: We propose a new type of energy-efficient multi-bit magnetic memory based on current-driven, field-free, controlled domain wall motion. A meandering domain wall channel with precisely interspersed pinning regions provides the multi-bit capability of a magnetic tunnel junction memory. The magnetic free layer of the memory device has perpendicular magnetic anisotropy and interfacial Dzyaloshinskii-Moriya interaction, so that spin-orbit torques induce efficient domain wall motion. Using micromagnetic simulations we find two different cell designs: two-way and four-way switching. The memory cell design choices and the physics of pinning mechanisms are discussed in detail. Furthermore, we show that switching reliability and speed may be significantly improved by replacing the ferromagnetic free layer with a synthetic antiferromagnetic layer. Switching behavior and material choices will be discussed for the two memory implementations.
Source: IEEE Transactions on Magnetics
Institution: Argonne National Laboratory
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $2,645
OpenAlex ID: W4410639411