Work

Finite Element Analysis of the Asymmetric Warpage Induced by the Oxidation Process in Trench Insulated Gate Bipolar Transistor (Trench IGBT) 12” Si Patterned Wafers

Year: 2025

Type: conference-paper

Source: International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)

DOI: 10.1109/eurosime65125.2025.11006629

Authors: Vincenzo Vinciguerra, Filippo Sabatini, Mohamed Boutaleb, Giuseppe Luigi Malgioglio, Simone Dario Mariani, Fabrice Roqueta, Davide Fagiani, Marco Renna, Paola Zuliani, Andrea Li Bassi

Institutions: Politecnico di Milano, STMicroelectronics (France)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: NextGenerationEU

OpenAlex ID: W4410639773

FWCI: 4.601

Cites: 26

Cited by: 2

Related to: 10