An ultra-high-speed vertically illuminated self-driven lateral asymmetric InSe photodetector
Year: 2025
Type: article
Abstract: Jones at a wavelength of 785 nm. The device achieves an RF 3 dB bandwidth of 2.5 MHz, corresponding to an ultrafast response time of 140 ns, establishing a new benchmark for zero-bias InSe photodetectors. The exceptional performance is attributed to using asymmetric electrodes, which establish a built-in electric field within the depletion region. This field facilitates the rapid separation of photogenerated electron-hole pairs, which reduces carrier lifetime and minimizes recombination effects, thereby significantly boosting the response speed. Our results underscore the potential of InSe photodetectors with asymmetric contacts for achieving low dark current, high-speed operation, and low power consumption, offering a promising pathway for the development of next-generation optoelectronic devices based on 2D materials.
Source: Nanoscale
DOI: 10.1039/d5nr00465a
Institution: New York University Abu Dhabi
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: hybrid
Funder: New York University Abu Dhabi
OpenAlex ID: W4410697229