Work

Field Effect Transistors Based on α‐MoO 3 Exfoliated Crystals: Fabrication, Functionalization and Characterization

Year: 2025

Type: article

Source: physica status solidi (RRL) - Rapid Research Letters

DOI: 10.1002/pssr.202500104

Authors: Daniela R. Pereira, Chamseddine Bouhafs, Dirkjan Verheij, Carlos Díaz‐Guerra, Luis Vázquez, Marco Peres, Susana Cardoso, Paulo P. Freitas, Katharina Lorenz

Institutions: University of Lisbon, Instituto de Engenharia de Sistemas e Computadores Microsistemas e Nanotecnologias, Instituto Superior Técnico, Universidad Complutense de Madrid, Consejo Superior de Investigaciones Científicas, Instituto de Ciencia de Materiales de Madrid, International Iberian Nanotechnology Laboratory

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: Universidad Complutense de Madrid, Fundação para a Ciência e a Tecnologia

Awards: G2360840888, G3060507515, Processamento de Ga2O3 por feixes de iões, Transístores de efeito de campo de óxidos 2D para biosensores eficientes, Defect engineered 2D oxide field effect transistors for efficiente biosensing

OpenAlex ID: W4410719728

FWCI: 0.207

Cites: 49

Cited by: 1

Related to: 10