Work

Impact of asymmetric source-to-gate and drain-to-gate overlap lengths on the performance of back gate IGZO TFTs

Year: 2025

Type: article

Source: Japanese Journal of Applied Physics

DOI: 10.35848/1347-4065/addcda

Authors: Yunjiao Bao, Jie Luo, Lianlian Li, Yanyu Yang, Yupeng Lu, Gaobo Xu, Huaxiang Yin

Institutions: Chinese Academy of Sciences, Institute of Microelectronics, University of Chinese Academy of Sciences

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4410733508

FWCI:

Cites: 28

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Related to: 10