Improved parameter extraction method of Schottky diode model for microwave energy transfer rectifier circuit
Year: 2025
Type: article
Abstract: A novel parameter extraction method for the Schottky diode’s equivalent-circuit model is proposed, and used to design high-efficiency microwave rectifier circuits. This method only use the Vector Network Analyzer (VNA) to extract the nonlinear intrinsic parameters and linear parasitic parameters in the equivalent circuit through the S-parameters of Schottky diode ports measured under different bias voltages. Taking the Schottky diode HSMS270B as an example, the parameters are extracted and modeled by this method, and it is verified that the simulation results are strongly correlated with the measured results in a microwave rectifier circuit with the operating frequency of 2.45 GHz, particularly in terms of the relationship between the output voltage of the rectifier circuit and the input power.
Source: IEICE Electronics Express
Authors: Dongping Xiao, Binbin Li, Weiguo Lu, Xiaotong Wang, Ke Wang, Huaiqing Zhang
Institution: Chongqing University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: diamond
Awards: G4509793948, G91167649
OpenAlex ID: W4410736333
