Work

Theoretical analysis of current–voltage characteristics of GaN/AlN resonant tunneling diodes including electron phase relaxation in quantum well

Year: 2025

Type: article

Source: Japanese Journal of Applied Physics

DOI: 10.35848/1347-4065/addd79

Author: Masanori Nagase

Institution: National Institute of Advanced Industrial Science and Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4410769381

FWCI: 0.323

Cites: 51

Cited by: 1

Related to: 10