Work

Metal layer oxide void leading to a reliability failure

Year: 2025

Type: conference-paper

Source: Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)

DOI: 10.1109/asmc64512.2025.11010743

Authors: Seiichi Takedai, Daniel Henke, Stephen Casey, See Ting Lau, Haifeng Sheng, Ting Wu, Justin Gardner, Chok Yoa Chau

Institutions: Micron (United States), Micron (Singapore)

Language: English

Topic: Integrated Circuits and Semiconductor Failure Analysis

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4410770390

FWCI:

Cites: 4

Cited by:

Related to: 10