Work

Void Defect Improvement with Barrier Metal-Cu Seed and Electroplating Recipes Optimization

Year: 2025

Type: conference-paper

Source: Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)

DOI: 10.1109/asmc64512.2025.11010772

Authors: Akshay Pravinchandra Patel, Philip Kerry Sitterle, Jarett Clay Martin

Institution: Samsung Austin Semiconductor (United States)

Language: English

Topic: Copper Interconnects and Reliability

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4410770973

FWCI:

Cites: 6

Cited by:

Related to: 10