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Understanding and passivating deep-level intrinsic defects in two-dimensional ultra-wide bandgap semiconductor AsSbO3 for enhanced optoelectronic applications

Year: 2025

Type: article

Source: Chinese Journal of Physics

DOI: 10.1016/j.cjph.2025.05.031

Authors: Zhu-You Liu, Fu-Cheng Lu, Chen Zhang, Hui-Xiong Deng

Institutions: Inner Mongolia University, Chinese Academy of Sciences, Institute of Semiconductors, University of Chinese Academy of Sciences

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: Innovative Research Group Project of the National Natural Science Foundation of China, National Natural Science Foundation of China, Chinese Academy of Sciences

Awards: G3697265971, G7744057511

OpenAlex ID: W4410799659

FWCI:

Cites: 41

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Related to: 10