A 22-nm 109.3-to-249.5-TFLOPS/W Outlier-Aware Floating-Point SRAM Compute-in-Memory Macro for Large Language Models
Year: 2025
Type: article
Authors: Siqi He, Haozhe Zhu, Hongyi Zhang, Yujie Ma, Zexing Chen, Mengjie Li, Danfeng Zhai, Chixiao Chen, Qi Liu, Xiaoyang Zeng, Ming Liu
Institution: Fudan University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Awards: G3231766933, G4906109994, G5218974994
OpenAlex ID: W4410809258
