Work

Aluminum Boron Nitride Ferroelectric Field-Effect Transistors With ZnO Semiconductor Channel

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3570279

Authors: Quyen Tran, John Hayden, Joseph Casamento, Jon-Paul Maria, Thomas N. Jackson

Institution: Pennsylvania State University

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: U.S. Department of Energy

Award: CENTER FOR 3D FERROELECTRIC MICROELECTRONICS

OpenAlex ID: W4410810191

FWCI:

Cites: 34

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Related to: 10