Back-Gate Bias-Controllable Subthreshold Slope of Junctionless Transistors
Year: 2025
Type: article
Institutions: Gyeongsang National University, Korean Intellectual Property Office, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Laboratoire d'Électronique des Technologies de l'Information, Institut polytechnique de Grenoble, Centre de Radiofréquences, Optique et Micro-nanoélectronique des Alpes
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4410810318