Work

Superior QLC Retention Enhancement of a Large Memory Window FEFET Through Gate Stack Engineering

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3568755

Authors: Song-Hyeon Kuk, Bong Ho Kim, Youngkeun Park, Kyul Ko, Hyeon-Seong Hwang, Byung Jin Cho, Jae-Hoon Han, Sang-Hyeon Kim

Institutions: Korea Advanced Institute of Science and Technology, Korea Institute of Science and Technology

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Research Foundation of Korea, Photoelectronic Hybrid Research Center, Korea Institute of Science and Technology, IC Design Education Center

Awards: G4304761340, G4728934209, G5184978142, G6918809404, G921594505

OpenAlex ID: W4410810328

FWCI: 1.366

Cites: 45

Cited by: 6

Related to: 10