Year: 2025
Type: article
Abstract: Epitaxial growth of III‐V light sources onto silicon (Si) platforms is technologically important for numerous applications in photonics. High‐performance quantum dot (QD) lasers on Si have been carried out using molecular beam epitaxy systems because they can permit precise epitaxy control for sophisticated III–V QD growth and low epitaxy temperatures. Although the metal‐organic chemical vapor deposition system (MOCVD) is the choice of the III–V optoelectronics industry and more advantageous for Si photonic platform integrations, no high‐performance, reliable III–V lasers epitaxially integrated onto Si have been demonstrated using MOCVD. Here, all‐MOCVD‐grown III–V QD lasers on Si with a threshold current density of 255 A cm −2 are shown, lasing up to 115 °C, and extrapolated device lifetimes exceeding 20 years when aged at 55 °C. These impressive results are achieved by solving two critical issues, which are the growth of high‐quality QDs and two‐step p ‐Al 0.4 Ga 0.6 As cladding growth without free carrier absorption. This work paves the way for commercializing Si photonics integrated with efficient and reliable III‐V on‐chip light sources in a scalable fashion.
Source: Laser & Photonics Review
Authors: Honghwi Park, Seungchul Lee, Won Seok Han, Daehwan Jung, HoSung Kim
Institutions: Kumoh National Institute of Technology, Electronics and Telecommunications Research Institute, Korea Advanced Institute of Science and Technology, Korea Institute of Science and Technology, Korea University of Science and Technology, Samsung (South Korea), Samsung Advanced Institute of Technology (South Korea), Samsung Electronics (South Korea)
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $4,880
Awards: G3212020146, G5099120024, G7081961519
OpenAlex ID: W4410810760