Integrating photodetection and neuromorphic vision in ALD-grown amorphous Ga 2 O 3 thin films via bias-voltage modulation
Year: 2025
Type: article
Abstract: We demonstrate what we believe to be a new atomic layer deposition (ALD) process utilizing gallium chloride (GaCl 3 ) and water vapor as complementary precursors for synthesizing high-quality Ga 2 O 3 thin films. The developed process enables the growth of ultrasmooth amorphous Ga 2 O 3 layers with sub-nanometer surface roughness and an ultrawide bandgap of 5.29 eV, ideal for deep-ultraviolet (DUV) photonic applications. Metal-semiconductor-metal (MSM) photodetectors employing the Au/Ga 2 O 3 /Au architecture achieve exceptional performance metrics, including an outstanding photocurrent ratio of 98.36 under 254 nm illumination and ultrafast response characteristics (0.23 s rise/0.25 s decay times). The devices exhibit unique bias-tunable dual-mode operation: low-voltage operation enables conventional fast-response photodetection, while high bias conditions induce persistent photoconductivity effects. This voltage-dependent reconfigurability allows effective emulation of neurobiological functions, particularly demonstrating paired-pulse facilitation and replicating sophisticated learning-forgetting-relearning cognitive processes. Our findings establish ALD-grown Ga 2 O 3 as a versatile platform for developing multifunctional optoelectronic systems that synergistically integrate high-performance DUV detection with neuromorphic computing capabilities, paving the way for next-generation reconfigurable optical memory devices and bio-inspired visual processing architectures.
Source: Optics Express
DOI: 10.1364/oe.564628
Language: English
Topic: Ga2O3 and related materials
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,270
Award: G4666840319
OpenAlex ID: W4410814414