Work

Solid State Defect Emitters With no Electrical Activity

Year: 2025

Type: article

Abstract: Point defects may introduce defect levels into the fundamental bandgap of the host semiconductors that alter the electrical properties of the material. As a consequence, the in-gap defect levels and states automatically lower the threshold energy of optical excitation associated with the optical gap of the host semiconductor. It is, therefore, a common assumption that solid-state defect emitters in semiconductors ultimately alter the conductivity of the host. This study demonstrate, on a particular defect in 4H silicon carbide, that an unrecognized class of point defects exists that are optically active but electrically inactive in the ground state.

Source: Advanced Science

DOI: 10.1002/advs.202503350

Authors: Pei Li, Song Li, Péter Udvarhelyi, Bing Huang, Adam Gali

Institutions: Tianjin University of Technology, HUN-REN Wigner Research Centre for Physics, Beijing Computational Science Research Center, University of California, Los Angeles, Budapest University of Technology and Economics, Beijing Normal University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $6,730

Funders: European Commission, National Natural Science Foundation of China, Nemzeti Kutatási Fejlesztési és Innovációs Hivatal, NSAF Joint Fund, National Key Research and Development Program of China, National Safety Academic Fund, National Research, Development and Innovation Office

Awards: G1505049281, G2044776484, G2409617960, G2507164521, G285949800, G28676459, Spin based quantum computer and simulator (SPINUS), G3621036087, G3898308737, G4472957100, G596116052, G6375155116, G7709156828, G7777819896

OpenAlex ID: W4410827937

FWCI: 0.902

Cites: 73

Cited by: 4

Related to: 10