Work

Low Leakage Current β-Ga₂O₃ Self-Aligned Trench Junction Barrier Schottky Diodes

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3571880

Authors: Shengliang Cheng, Yuru Lai, Xing Lu, Tiecheng Luo, Haowen Luo, Huichao Hu, Rui Zhou, Huaxing Jiang, Zhisheng Wu, Jun Liang, Zimin Chen, Gang Wang, Yanli Pei

Institutions: Sun Yat-sen University, State Key Laboratory of Optoelectronic Materials and Technology, South China University of Technology, Shenzhen Institute of Information Technology

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, State Key Laboratory of Photovoltaic Science and Technology, National Key Research and Development Program of China

Awards: G3886792693, G542239786, G7129634326

OpenAlex ID: W4410853243

FWCI: 0.8

Cites: 52

Cited by: 5

Related to: 10