Work

1200-V/10-A Low Thermal Resistance Ga₂O₃ Schottky Barrier Diode With Composite Terminal Structure and Substrate Thinning

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3569254

Authors: Zhihong Feng, Shida Han, Yuangang Wang, Hongyu Guo, Shaobo Dun, Hongyu Liu, Tingting Han, Yuanjie Lv

Institution: Hebei Semiconductor Research Institute

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

OpenAlex ID: W4410853999

FWCI: 1.121

Cites: 29

Cited by: 7

Related to: 10