Work

Semi-SJ high-k IGBT: An Effective Approach to Increase Breakdown Voltage

Year: 2025

Type: conference-paper

Source: Devices for Integrated Circuit (DevIC)

DOI: 10.1109/devic63749.2025.11012566

Authors: Vidya Bhushan Rathore, Alok Naugarhiya, Nilesh Goel

Institutions: National Institute of Technology Raipur, Birla Institute of Technology and Science, Pilani - Dubai Campus

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDGs: Industry, innovation and infrastructure, Affordable and clean energy

Open Access status: closed

OpenAlex ID: W4410854153

FWCI: 2.358

Cites: 6

Cited by: 1

Related to: 10