Work

Investigation of the impacts of different parameters of Buffer Carbon Trapping in AlGaN/GaN HEMTs

Year: 2025

Type: conference-paper

Source: International Conference on Electrical, Computer and Communication Engineering

DOI: 10.1109/ecce64574.2025.11013945

Authors: Abdullah Al Shadi, Md. Nur Kutubul Alam, Bijoy Sorker

Institution: Khulna University of Engineering and Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4410854402

FWCI:

Cites: 19

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Related to: 10