Inverted resistive switching mechanism in polycrystalline PBTTT-C14 polymer devices based on contact geometry and molecular packing for neuromorphic memory
Year: 2025
Type: article
Source: Journal of Materials Chemistry C
DOI: 10.1039/d5tc01372k
Authors: Ramesh Singh Bisht, Pramod Kumar
Institution: Indian Institute of Technology Bombay
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Award: G1739248793
OpenAlex ID: W4410874286