Year: 2025
Type: article
Abstract: The expected outstanding performance of GaN-based transistors in power applications, characterized by high switching frequency, efficiency, and compactness, requires that the design rules of converter layout optimization, filtering, and shielding need to be reexamined. Addressing the above topics, this paper reviews commercial GaN power transistors and specifies their integration techniques, including printed circuit board (PCB) embedded solutions. Then, referring to the optimization results of a half-bridge inverter leg, design techniques are presented that reduce the harmful effect of inductive and capacitive internal converter couplings, thus mitigating the electromagnetic interference (EMI) conducted emissions.
Source: Energies
DOI: 10.3390/en18112890
Authors: Piotr J. Chrzan, Pawel B. Derkacz
Institutions: Gdańsk University of Technology, AREX (Poland)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $3,137
OpenAlex ID: W4410960639