Work

Si top corner damage-free etch process for shallow trench isolation

Year: 2025

Type: conference-paper

DOI: 10.1109/cstic64481.2025.11017820

Authors: Yingjie Wang, Haiying Liu, Guang Yang, LitianXu

Institution: NAURA (China)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4410986413

FWCI:

Cites: 2

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Related to: 10