22 Al Gate Change W Gate Improve for NMOS Performance
Year: 2025
Type: conference-paper
Authors: Yanhua Cai, Zhushaojia, Yumingfei, Yu Bao, Jingxun Fang, Yu Zhang
Institution: Shanghai Huali Microelectronics (China)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4410986512