Work

Investigation of Performance Optimization in Bottom-Gate A-IGZO Thin-Film Transistors with Varying Thicknesses of PECVD-SiO2 Gate Dielectric

Year: 2025

Type: conference-paper

DOI: 10.1109/cstic64481.2025.11017948

Authors: Longge Mao, Yupeng Lu, Yanyu Yang, Haiyuan Lv, Gaobo Xu

Institutions: Chinese Academy of Sciences, Institute of Microelectronics

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4410987358

FWCI:

Cites: 7

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Related to: 10