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V-Shaped Dislocation Prevention by Selective SiGe Epitaxy Process Tuning

Year: 2025

Type: conference-paper

DOI: 10.1109/cstic64481.2025.11018032

Authors: CunZhe He, DongLiang Gao, Xuan Liu

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4410987550

FWCI:

Cites: 1

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Related to: 10