Work

SiC Trench Etch with Varying Aspect Ratio and Rounded Corner

Year: 2025

Type: conference-paper

DOI: 10.1109/cstic64481.2025.11018040

Authors: Shijing Wang, Jie Liang, Leyi Tu, Mingyu Zhang, Zhiqian Gui, Zhaoxiang Wang

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4410987786

FWCI:

Cites: 11

Cited by:

Related to: 10