Work

Accuracy Improvement of the Large-Signal Model of a High-Power GaN HEMT using Power-Dependent Constant and Tapered Thermal Resistance Methods

Year: 2025

Type: article

Abstract: This study improved the accuracy of the large-signal model of a high-power gallium nitride (GaN) high electron mobility transistor (HEMT) by using power-dependent constant and tapered thermal resistance methods. The findings indicate that the channel temperature of a GaN HEMT is affected by the number of gate fingers and the thickness of the package substrate as well as the structure of the transistor. Furthermore, the rise in the channel temperature in the transistor was considered by including thermal resistance in the large-signal model. To account for thermal effects, power-dependent constant thermal resistance and power-dependent tapered thermal resistance were included in the large-signal model of the high-power transistor, and their effectiveness was validated for a 140-W GaN HEMT with 80 gate fingers. The proposed power-dependent thermal resistance approaches predicted optimum load impedance and power performance better than the conventional power-independent constant thermal resistance approach. Furthermore, the simulated results for these approaches were in good agreement with the measured load pull results.

Source: Journal of electromagnetic engineering and science

DOI: 10.26866/jees.2025.3.r.294

Authors: Ho-Sang Kwon, Dong-Wook Kim

Institutions: Agency for Defense Development, Chungnam National University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: gold

Estimated APC paid: $115