Work

Trap Thawing-Induced Threshold Voltage Instability in p-GaN HEMTs at Cryogenic Temperatures During Pre-Stress

Year: 2025

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2025.3577493

Authors: Chuan Song, Wen Yang, Weijian Wang, Jianlang Liao, Peng Wu, Huaxing Jiang, Sheng Jiang, Bin Li

Institution: South China University of Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Key Research and Development Program of Liaoning Province, Changsha Science and Technology Project, Basic and Applied Basic Research Foundation of Guangdong Province

Awards: G1589871331, G6642239391, G748797905, G846083743

OpenAlex ID: W4411086872

FWCI: 0.969

Cites: 31

Cited by: 3

Related to: 10