Modulation-Acceptor-Doped SiGe Schottky Barrier Field-Effect Transistors
Year: 2025
Type: article
Abstract: Modulation acceptor doping allows for the generation of holes as free charge carriers in the semiconductor by introducing acceptor states in the gate oxide. This overcomes the limitations of nanoscale doping and maintains the characteristics of impurity-free semiconductor channels. Here, we demonstrate modulation doping via Al-induced acceptor states in a SiO2gate-dielectric of a SiGe-based Schottky barrier field-effect transistor. Compared to an undoped reference sample, pulsed and temperature-dependent electrical measurements revealed a 4170-times higher conductivity of the ungated SiGe channel and a 3-fold increase in the p-type on-state current when the device is operated as a transistor. Importantly, the application of modulation doping to Ge-rich SBFETs may contribute to nanoscale devices with lower supply voltages and faster switching speeds.
Source: IEEE Electron Device Letters
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $2,645
Awards: Silicon light emitters based on defect-enhanced quantum dots, ModulationsAkzeptordotierung von SiO2 als neuartige Dotierungsmethode für Silicium Nanodrähte (MADSiNano), Alternative Methoden zur Dotierung und zum GrenzflächendefektEngineering von Silicium und SiliciumNanostrukturen für Photovoltaische und Nanoelektronische Anwendungen, G9000013645
OpenAlex ID: W4411086873