Work

Lithography-Defined Semiconductor Moirés with Anomalous In-Gap Quantum Hall States

Year: 2025
Type: article
Abstract: Quantum materials and phenomena have attracted great interest for their potential applications in next-generation microelectronics and quantum-information technologies. In one especially interesting class of quantum materials, moiré superlattices (MSLs) formed by twisted bilayers of 2D materials, a wide range of novel phenomena are observed. However, there exist daunting challenges such as reproducibility and scalability of utilizing 2D MSLs for microelectronics and quantum technologies due to their exfoliate-tear-stack method. Here, we propose lithography-defined semiconductor MSLs, in which three fundamental parameters─electron-electron interaction, spin-orbit coupling, and band topology─are designable. We experimentally investigate quantum-transport properties in a moiré specimen made in an InAs quantum well. Strong anomalous in-gap states are observed within the same integer quantum Hall state. Our work opens up new horizons for studying 2D quantum-materials phenomena in semiconductors featuring superior industry-level quality and state-of-the-art technologies, and they may potentially enable new quantum-information and microelectronics technologies.
Source: Nano Letters
Language: English
Open Access status: hybrid
Estimated APC paid: $4,500
OpenAlex ID: W4411095263
FWCI: 0.385
Cites: 46
Cited by: 1
Related to: 10