Degradation mechanisms of Schottky p-GaN gate AlGaN/GaN HEMTs under high-temperature reverse bias stress
Year: 2025
Type: article
Source: Chinese Physics B
Authors: Fei 飞 Hu 胡, Chengbing 成兵 Pan 潘, Xinyuan 鑫源 Zheng 郑, Yibo 一博 Ning 宁, Xueyan 雪燕 Li 李, Lixia 丽霞 Zhao 赵
Institution: Tiangong University
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4411099425